SI8800EDB_11 Datasheet, PDF (5/8 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET

Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by R_DS(on)*
10
1
100 μs
1 ms
0.1
T_A = 25 °C
10 ms
Single Pulse
100 ms, 1 s
BVDSS Limited
10 s, DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
3.0
0.8
2.5
0.6
2.0
1.5
0.4
1.0
0.2
0.5
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Current Derating*
Note:
When mounted on 1" x 1" FR4 with full copper.
0.0
25
50
75
100
125
150
T_A - Ambient Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 66700
www.vishay.com
S11-1145-Rev. B, 13-Jun-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000