SI7872DP Datasheet, PDF (6/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si7872DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 10 thru 4 V
25
25
MOSFET CHANNEL−2
Transfer Characteristics
20
20
3V
15
15
10
5
0
0
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
0.040
On-Resistance vs. Drain Current
10
T_C = 125_C
5
25_C
-55 _C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
2000
Capacitance
0.032
0.024
0.016
V_GS = 4.5 V
V_GS = 10 V
1600
C_iss
1200
800
0.008
0.000
0
5
10
15
20
25
30
I_D - Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 7.5 A
8
6
4
2
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
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6
400
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 7.5 A
1.4
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
Document Number: 72035
S-21978—Rev. A, 04-Nov-02