SI7872DP Datasheet, PDF (1/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si7872DP
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
Channel-1
30
Channel-2
r_DS(on) (W)
0.022 @ V_GS = 10 V
0.030 @ V_GS = 4.5 V
0.022 @ V_GS = 10 V
0.028 @ V_GS = 4.5 V
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
V_SD (V)
Diode Forward Voltage
30
0.50 V @ 1.0 A
PowerPAKt SO-8
I_D (A)
10
8
10
8
I_F (A)
3.0
FEATURES
D LITTLE FOOT Plust Schottky
D PWM Optimized
D New Low Thermal Resistance PowerPAK
package with low 1.07 mm profile
APPLICATIONS
D Asymmetrical Buck-Boost DC/DC Converter
D₁
D₂
6.15 mm
D1
8
D1
7
D2
6
D2
5
S1
1
G1
2
5.15 mm
S2
3
G2
4
Bottom View
Schottky Diode
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
10 secs
Steady State
Parameter
Symbol ^{Channel-1 Channel-2 Channel-1 Channel-2}
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
T_A = 25_C
T_A = 70_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
"12
"20
"12
10
6.4
7
5.1
30
2.9
1.1
3.5
1.4
2.2
0.9
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72035
S-21978—Rev. A, 04-Nov-02
t v 10 sec
Steady-State
Steady-State
Symbol
R_thJA
R_thJC
MOSFET
Typical Maximum
26
35
60
85
4.1
6.0
Schottky
Typical Maximum
26
35
60
85
4.1
6.0
Unit
_C/W
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