SI7872DP Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si7872DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 10 thru 5 V
4V
25
25
MOSFET CHANNEL−1
Transfer Characteristics
20
20
15
15
10
5
0
0
0.040
3V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
T_C = 125_C
5
25_C
-55 _C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
1200
Capacitance
0.030
0.020
0.010
V_GS = 4.5 V
V_GS = 10 V
0.000
0
5
10
15
20
25
30
I_D - Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 7.5 A
8
6
4
2
960
C_iss
720
480
240
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 7.5 A
1.4
1.2
1.0
0.8
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Document Number: 72035
S-21978—Rev. A, 04-Nov-02
0.6
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
www.vishay.com
3