SI7872DP Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si7872DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET CHANNEL−1
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.06
10
0.05
T_J = 150_C
1
T_J = 25_C
0.04
I_D = 7.5 A
0.03
0.02
0.01
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
100
0.2
80
I_D = 250 mA
-0.0
60
-0.2
40
-0.4
-0.6
20
-0.8
-50 -25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
10^{- 3}
10^{- 2}
10^{- 1}
1
10
Time (sec)
www.vishay.com
4
Safe Operating Area, Junction-to-Foot
100
r_DS(on) Limited
I_DM Limited
10
1 ms
1
I_D(on)
Limited
10 ms
0.1
0.01
0.1
T_C = 25_C
Single Pulse
100 ms
1s
10 s
dc
BV_DSS Limited
1
10
100
V_DS - Drain-to-Source Voltage (V)
Document Number: 72035
S-21978—Rev. A, 04-Nov-02