SI7686DP Datasheet, PDF (6/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7686DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^–4
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 70_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
2
1
Duty Cycle = 0.5
0.2
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^–4
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73451.
www.vishay.com
6
Document Number: 73451
S–51334—Rev. A, 25-Jul-05