SI7686DP Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7686DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
On-Resistance vs. Gate-to-Source Voltage
0.030
0.025
I_D = 13.8 A
T_J = 150_C
10
0.020
1
0.00
T_J = 25_C
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
0.015
0.010
T_J = 25_C
T_J = 125_C
0.005
3
4
5
6
7
8
9
10
V_GS – Gate-to-Source Voltage (V)
Threshold Voltage
2.6
2.4
2.2
Single Pulse Power, Junction-to-Ambient
50
40
2.0
30
I_D = 250 mA
1.8
20
1.6
1.4
10
1.2
1.0
–50 –25
0 25 50 75 100 125 150
0
0.01
0.1
T_J – Temperature (_C)
Safe Operating Area, Junction-to-Ambient
100
1
10
Time (sec)
100 600
*Limited by r_DS(on)
10
1
0.1
1 ms
10 ms
100 ms
1s
10 s
dc
0.01
T_A = 25_C
Single Pulse
0.001
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
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4
Document Number: 73451
S–51334—Rev. A, 25-Jul-05