SI7686DP Datasheet, PDF (2/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7686DP
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_DS
DV_DS/T_J
DV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = 250 mA
I_D = 250 mA
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 13.8 A
V_GS = 4.5 V, I_D = 11.4 A
V_DS = 15 V, I_D = 13.8 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C_iss
C_oss
C_rss
Q_g
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
V_DS = 15 V, V_GS = 10 V, I_D = 13.8 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current^a
I_SM
Body Diode Voltage
V_SD
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
Reverse Recovery Rise Time
t_b
V_DS = 15 V, V_GS = 5 V, I_D= 13.8 A
f = 1 MHz
V_DD = 15 V, R_L = 1.5 W
I_D ^ 10 A, V_GEN = 4.5 V, R_g = 1 W
V_DD = 15 V, R_L = 1.5 W
I_D ^ 10 A, V_GEN = 10 V, R_g = 1 W
T_C = 25_C
I_S = 2.6 A
I_F = 2.6 A, di/dt = 100 A/ms, T_J = 25_C
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
30
31.3
–6
V
mV/_C
1
3
V
"100
nA
1
mA
10
50
A
0.0078 0.0095
W
0.011 0.014
56
S
1220
230
pF
98
17
26
9.2
14
nC
4.1
2.8
0.8
1.2
W
20
30
20
30
20
30
8
15
ns
13
20
16
25
23
35
8
15
31.5
A
50
0.8
1.2
V
25
50
ns
15
30
nC
12.5
ns
12.5
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73451
S–51334—Rev. A, 25-Jul-05