SI7686DP Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
Si7686DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
10
40
V_GS = 10 thru 4 V
8
Transfer Characteristics
30
6
20
10
0
0.0
3V
0.4
0.8
1.2
1.6
2.0
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
0.0140
0.0120
0.0100
0.0080
V_GS = 4.5 V
V_GS = 10 V
0.0060
0.0040
0
10
20
30
40
50
I_D – Drain Current (A)
Gate Charge
10
I_D = 13.8 A
8
V_DS = 15 V
6
V_DS = 21 V
4
2
0
0
4
8
12
16
20
Q_g – Total Gate Charge (nC)
Document Number: 73451
S–51334—Rev. A, 25-Jul-05
4
T_C = 125_C
2
25_C
–55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS – Gate-to-Source Voltage (V)
1500
Capacitance
C_iss
1200
900
600
C_oss
300
C_rss
0
0
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6 ^{ID = 13.8 A}
V_GS = 10 V
1.4
1.2
V_GS = 4.5 V
1.0
0.8
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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