SI7430DP Datasheet, PDF (6/7 Pages) Vishay Siliconix – N-Channel 150-V (D-S) WFET

Si7430DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
1
Duty Cycle = 0.5
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 65 °C/W
3. T_JM – T = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.2
0.1
0.1 ^0.05
0.02
Single Pulse
0.01
10 ^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?74282.
www.vishay.com
6
Document Number: 74282
S-61293-Rev. A, 24-Jul-06