SI7430DP Datasheet, PDF (5/7 Pages) Vishay Siliconix – N-Channel 150-V (D-S) WFET

TYPICAL CHARACTERISTICS 25 °C, unless noted
30
Si7430DP
Vishay Siliconix
24
18
12
6
0
0
25
50
75
100 125 150
T_C – Case Temperature (°C)
Current Derating*
85
2.5
68
2.0
51
1.5
34
1.0
17
0.5
0
0
25
50
75
100 125 150
T_C – Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25
50
75
100 125 150
T_C – Case Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation P_D is based on T_J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74282
S-61293-Rev. A, 24-Jul-06
www.vishay.com
5