SI7430DP Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 150-V (D-S) WFET

TYPICAL CHARACTERISTICS 25 °C, unless noted
60
V_GS = 10 thru 7 V
48
36
V_GS = 6 V
24
12
0
0
0.055
V_GS = 5 V
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
Output Characteristics
0.051
0.047
0.043
0.039
V_GS = 8 V
V_GS = 10 V
0.035
0
10
20
30
40
50
60
I_D – Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 5 A
8
V_DS = 50 V
V_DS = 75 V
6
V_DS = 100 V
4
2
0
0
6
12
18
24
30
Q_g – Total Gate Charge (nC)
Gate Charge
Document Number: 74282
S-61293-Rev. A, 24-Jul-06
Si7430DP
Vishay Siliconix
1.2
0.9
T_C = 125 °C
0.6
T_C = 25 °C
0.3
T_C = - 55 °C
0.0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Transfer Characteristics
2000
1600
C_iss
1200
800
400
C_oss
0 ^Crss
0
20
40
60
80
100
V_DS – Drain-to-Source Voltage (V)
Capacitance
2.5
I_D = 5 A
2.1
1.7
V_GS = 10 V
1.3
V_GS = 8 V
0.9
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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