SI7430DP Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 150-V (D-S) WFET

Si7430DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
100
10
T_J = 150 °C
1
0.1
T_J = 25 °C
0.01
0.001
0
1.0
0.2
0.4
0.6
0.8
1
1.2
V_SD − Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.0
I_D = 5 mA
- 0.5
- 1.0
- 1.5
- 50 - 25
0 25 50 75 100 125 150
T_J – Temperature ( C)
Threshold Voltage
100 _{*Limited by rDS(on)}
0.20
I_D = 5 A
0.16
0.12
T_J = 125 °C
0.08
T_J = 25 °C
0.04
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
40
0
0.001
0.01
0.1
1
10
Time (sec)
Single Pulse Power, Junction-to-Ambient
www.vishay.com
4
10
1 ms
1
10 ms
100 ms
0.1
1s
T_A = 25 °C
10 s
Single Pulse
dc
0.01
0.01
0.1
1
10
100
1000
V_DS – Drain-to-Source Voltage (V)
*V_GS minimum V_GS at which r_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 74282
S-61293-Rev. A, 24-Jul-06