SI7315DN Datasheet, PDF (6/13 Pages) Vishay Siliconix – P-Channel 150 V (D-S) MOSFET

Si7315DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
1
Duty Cycle = 0.5
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 65 °C
3. T_JM – T = P_DMZ_thJA(t)
4. Surface Mounted
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1 ^0.05
0.02
Single Pulse
0.01
10 ^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62895.
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Document Number: 62895
6
S13-1816-Rev. A, 12-Aug-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000