SI7315DN Datasheet, PDF (4/13 Pages) Vishay Siliconix – P-Channel 150 V (D-S) MOSFET

Si7315DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.8
0.6
10
T_J = 150 °C
0.4
1
T_J = 25 °C
0.2
I_D = 2.4A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3.6
I_D = 250 μA
3.3
3
2.7
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
2.4
10
2.1
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
100
Time (s)
Single Pulse Power, Junction-to-Ambient
100
I limited
DM
10
Limited by R_DS(on)*
1
0.1
100 μs
1 ms
10 ms
100 ms
10s, 1 s
0.01
DC,
0.001
T_A = 25 °C
Single Pulse
BVDSS Limited
0.1
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 62895
4
S13-1816-Rev. A, 12-Aug-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000