SI7315DN Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 150 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si7315DN
Vishay Siliconix
10
8
6
4
2
0
0
0.4
V_GS = 10V thru 6V
V_GS = 5 V
V_GS = 4 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
5
4
3
2
1
0
0
1250
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.35
0.3
0.25
V_GS = 7.5 V
V_GS = 10 V
1000
C_iss
750
500
0.2
0.15
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 2.4 A
VDS = 38 V
8
VDS = 75 V
6
VDS = 120 V
4
2
250
C_oss
0 ^Crss
0
30
60
90
120
150
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.2
V_GS = 10 V, 7.5V/ 2.4A
1.75
1.3
0.85
0
0
4.4
8.8
13.2
17.6
22
Q_g - Total Gate Charge (nC)
Gate Charge
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62895
For technical questions, contact: [e-mail]
www.vishay.com
S13-1816-Rev. A, 12-Aug-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000