SI7315DN Datasheet, PDF (5/13 Pages) Vishay Siliconix – P-Channel 150 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
8
6
4
2
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
66
2.0
Si7315DN
Vishay Siliconix
49.5
1.5
33
1.0
16.5
0.5
0
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25
50
75
100
125
150
T_A - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on T_J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 62895
For technical questions, contact: [e-mail]
www.vishay.com
S13-1816-Rev. A, 12-Aug-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000