SI6544BDQ Datasheet, PDF (6/8 Pages) Vishay Siliconix – N-and P-Channel 30-V (D-S) MOSFET

Si6544BDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
V_GS = 10 thru 5 V
16
16
4V
12
12
P−CHANNEL
Transfer Characteristics
8
4
3V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.15
8
T_C = 125_C
4
25_C
- 55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS - Gate-to-Source Voltage (V)
1100
Capacitance
0.12
0.09
0.06
0.03
V_GS = 4.5 V
V_GS = 10 V
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
10
V_DS = 15 V
I_D = 3.8 A
8
Gate Charge
880
C_iss
660
440
C_oss
220
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 3.8 A
1.4
6
1.2
4
1.0
2
0.8
0
0.0
www.vishay.com
6
3.2
6.4
9.6
12.8
16.0
Q_g - Total Gate Charge (nC)
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
Document Number: 72244
S-31251—Rev. A, 16-Jun-03