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SI6544BDQ Datasheet, PDF (2/8 Pages) Vishay Siliconix – N-and P-Channel 30-V (D-S) MOSFET
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Si6544BDQ
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
VDS = VGS, ID = - 250 mA
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = - 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55_C
VDS = - 24 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VDS w - 5 V, VGS = - 10 V
VGS = 10 V, ID = 4.3 A
VGS = - 10 V, ID = - 3.8 A
VGS = 4.5 V, ID = 3.7 A
VGS = - 4.5 V, ID = - 2.8 A
VDS = 15 V, ID = 4.3 A
VDS = - 15 V, ID = - 3.8 A
IS = 1.25 A, VGS = 0 V
IS = - 1.25 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 15 V, VGS = 10 V, ID = 4.3 A
Qgs
P-Channel
VDS = - 15 V, VGS = - 10 V, ID = - 3.8 A
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain
Reverse Recovery Time
td(on)
tr
td(off)
tf
trr
N-Channel
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Channel
VDD = - 15 V, RL = 15 W
ID ^ - 1 A, VGEN = - 10 V, RG = 6 W
IF = 1.25 A, di/dt = 100 A/ms
IF = - 1.25 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
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2
Min Typ Max Unit
N-Ch
1.0
P-Ch
- 1.0
3.0
V
- 3.0
N-Ch
P-Ch
"100
nA
"100
N-Ch
1
P-Ch
N-Ch
-1
mA
5
P-Ch
-5
N-Ch
20
A
P-Ch
- 20
N-Ch
0.025 0.032
P-Ch
N-Ch
0.034 0.043
W
0.037 0.046
P-Ch
0.058 0.073
N-Ch
11
S
P-Ch
11
N-Ch
P-Ch
0.77
1.1
V
- 0.77
- 1.1
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
9.5
15
16
25
1.8
nC
2.3
1.55
4.5
0.45
W
8.8
13
25
14
25
14
25
14
25
30
50
ns
40
65
10
20
30
50
30
60
30
Document Number: 72244
S-31251—Rev. A, 16-Jun-03
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