SI6544BDQ Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-and P-Channel 30-V (D-S) MOSFET

Si6544BDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Source-Drain Diode Forward Voltage
20
10
On-Resistance vs. Gate-to-Source Voltage
0.15
0.12
T_J = 150_C
1
T_J = 25_C
0.09
I_D = 4.3 A
0.06
0.03
0.1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.2
I_D = 250 mA
- 0.0
- 0.2
- 0.4
- 0.6
Single Pulse Power, Junction-to-Ambient
200
160
120
80
40
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
10
Time (sec)
Safe Operating Area, Junction-to-Case
100
Limited by r_DS(on)
10
1 ms
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4
1
0.1
0.01
0.1
T_C = 25_C
Single Pulse
10 ms
100 ms
1s
10 s
dc
1
10
100
V_DS - Drain-to-Source Voltage (V)
Document Number: 72244
S-31251—Rev. A, 16-Jun-03