SI6544BDQ Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-and P-Channel 30-V (D-S) MOSFET

New Product
Si6544BDQ
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
30
P-Channel
- 30
r_DS(on) (W)
0.032 @ V_GS = 10 V
0.046 @ V_GS = 4.5 V
0.043 @ V_GS = - 10 V
0.073 @ V_GS = - 4.5 V
I_D (A)
4.3
3.7
- 3.8
- 2.8
FEATURES
D TrenchFETr Power MOSFETS
TSSOP-8
D₁ 1 _D
S_{1 2}
S_{1 3}
G_{1 4}
8 D2
7 ^S2
6 ^S2
5 ^G2
Top View
Ordering Information: Si6544BDQ-T1
D₁
G₁
S₁
N-Channel MOSFET
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol ^{10 sec Steady State 10 sec Steady State} Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
- 30
V
V_GS
"20
Continuous Drain Current (T_J = 150_C)^a
T_A = 25_C
T_A = 70_C
I_D
Pulsed Drain Current
I_DM
4.3
3.7
3.5
3.0
20
- 3.8
- 3.8
- 3.0
- 2.6
A
- 20
Continuous Source Current (Diode Conduction)^a
I_S
1..0
0.7
- 1..0
- 0.7
Maximum Power Dissipation^a
T_A = 25_C
T_A = 70_C
P_D
1.14
0.73
0.83
0.53
1.14
0.73
0.83
W
0.53
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady State
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Symbol
R_thJA
R_thJF
Document Number: 72244
S-31251—Rev. A, 16-Jun-03
Typical
88
120
65
Maximum
110
150
80
Unit
_C/W
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