SI5855DC_04 Datasheet, PDF (6/7 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

Si5855DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Capacitance
600
500
400
300
200
100
2
1
Duty Cycle = 0.5
0
0
4
8
12
16
20
V_KA − Reverse Voltage (V
Normalized Thermal Transient Impedance, Junction-to-Ambient
SCHOTTKY
0.2
0.1
0.1
0.05
0.02
0.01
10^−4
Single Pulse
10^−3
2
1
Duty Cycle = 0.5
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 95_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^−2
10^−1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
100
600
0.2
0.1
0.1 _0.05
0.01
10^−4
0.02
Single Pulse
10^−3
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6
10^−2
10^−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72232
S-40932—Rev. B, 17-May-04