SI5855DC_04 Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

Si5855DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
0.4
I_D = 2.7 A
0.3
T_J = 150_C
0.2
T_J = 25_C
0.1
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD − Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.3
I_D = 250 mA
0.2
0.1
0.0
−0.1
−0.2
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0.0
0
50
40
30
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
Single Pulse Power
20
10
0
10^−4 10^−3
10^−2 10^−1
1
Time (sec)
10 100 600
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4
Safe Operating Area
100
r_DS(on) Limited
10
I_DM Limited
1
0.1
0.01
0.1
I_D(on)
Limited
T_A = 25_C
Single Pulse
BV_DSS Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
1
10
100
V_DS − Drain-to-Source Voltage (V)
Document Number: 72232
S-40932—Rev. B, 17-May-04