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SI5855DC_04 Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET With Schottky Diode
Si5855DC
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
−20
rDS(on) (W)
0.110 @ VGS = −4.5 V
0.160 @ VGS = −2.5 V
0.240 @ VGS = −1.8 V
ID (A)
−3.6
−3.0
−2.4
SCHOTTKY PRODUCT SUMMARY
VKA (V)
20
Vf (V)
Diode Forward Voltage
0.375 V @ 1 A
IF (A)
1.0
1206-8 ChipFETr
FEATURES
D TrenchFETr Power MOSFETS
D Ultra Low Vf Schottky
D Si5853DC Pin Compatible
APPLICATIONS
D Charging Circuit in Portable Devices
S
K
1
A
K
A
K
S
D
G
D
Bottom View
G
Marking Code
JB XXX
Lot Traceability
and Date Code
Part # Code
D
A
P-Channel MOSFET
Ordering Information: Si5855DC-T1
Si5855DC-T1—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
VDS
VKA
VGS
−20
20
V
"8
Continuous Drain Current (TJ = 150_C) (MOSFET)a
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)a
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)a
Maximum Power Dissipation (Schottky)a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
IF
IFM
PD
TJ, Tstg
−3.6
−2.7
−2.6
−1.9
−10
A
−1.8
−0.9
1.0
7
2.1
1.1
1.1
0.6
W
1.9
1.1
1.0
0.56
−55 to 150
_C
260
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72232
S-40932—Rev. B, 17-May-04
www.vishay.com
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