SI5855DC_04 Datasheet, PDF (3/7 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

Si5855DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
10
V_GS = 5 thru 3 V
8
2.5 V
8
6
6
2V
4
4
MOSFET
Transfer Characteristics
T_C = −55_C
25_C
125_C
2
1.5 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
V_GS = 1.8 V
0.5
0.4
0.3
0.2
V_GS = 2.5 V
V_GS = 4.5 V
0.1
0.0
0
2
4
6
8
10
I_D − Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 2.7 A
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS − Gate-to-Source Voltage (V)
Capacitance
800
C_iss
600
400
200
C_oss
C_rss
0
0
4
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 2.7 A
1.4
3
1.2
2
1.0
1
0.8
0
0
1
2
3
4
5
6
Q_g − Total Gate Charge (nC)
Document Number: 72232
S-40932—Rev. B, 17-May-04
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
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