SI5853DC Datasheet, PDF (6/6 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

Si5853DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SCHOTTKY
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1 _0.05
0.02
0.01
10^--4
Single Pulse
10^--3
10^--2
10^--1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 110_C/W
3. T_JM -- T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1 _0.05
0.02
Single Pulse
0.01
10^--4
10^--3
10^--2
10^--1
1
10
Square Wave Pulse Duration (sec)
www.vishay.com
2-6
Document Number: 71239
S-21251—Rev. B, 05-Aug-02