SI5853DC Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

Si5853DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
0.4
I_D = 2.7 A
0.3
T_J = 150_C
0.2
T_J = 25_C
0.1
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD -- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.3
I_D = 250 mA
0.2
0.1
0.0
--0.1
--0.2
--50 --25
0 25 50 75 100 125 150
T_J -- Temperature (_C)
0.0
0
50
40
30
1
2
3
4
5
V_GS -- Gate-to-Source Voltage (V)
Single Pulse Power
20
10
0
10^--4 10^--3
10^--2
10^--1
1
Time (sec)
10 100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1 _0.05
0.02
0.01
10^--4
Single Pulse
10^--3
10^--2
10^--1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
1.
2.
t₂
Duty Cycle, D
Per Unit Base
=
=
t₁
R_th^t_J2A
=
90_C/W
3. T_JM -- T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
2-4
Document Number: 71239
S-21251—Rev. B, 05-Aug-02