SI5853DC Datasheet, PDF (5/6 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

Si5853DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 _0.05
0.02
MOSFET
Single Pulse
0.01
10^--4
10^--3
10^--2
10^--1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
20
5
10
1
10
SCHOTTKY
Forward Voltage Drop
1
0.1
20 V
0.01
10 V
T_J = 150_C
1
T_J = 25_C
0.001
0.0001
0
25
50
75
100
125 150
T_J -- Junction Temperature (_C)
150
0.1
0
Capacitance
0.2
0.4
0.6
0.8
1.0
V_F -- Forward Voltage Drop (V)
120
90
60
30
Document Number: 71239
S-21251—Rev. B, 05-Aug-02
0
0
4
8
12
16
20
V_KA -- Reverse Voltage (V
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