SI5853DC Datasheet, PDF (2/6 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

Si5853DC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^a
Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t ≤ 5 sec
Steady State
Steady State
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
R_thJA
R_thJF
Typical
50
77
90
110
30
33
Maximum
60
95
110
130
40
40
Unit
_C/W
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = --250 mA
V_DS = 0 V, V_GS = 8 V
V_DS = --16 V, V_GS = 0 V
V_DS = --16 V, V_GS = 0 V, T_J = 85_C
V_DS ≤ --5 V, V_GS = --4.5 V
V_GS = --4.5 V, I_D = --2.7 A
V_GS = --2.5 V, I_D = --2.2 A
V_GS = --1.8 V, I_D = --1 A
V_DS = --10 V, I_D = --2.7 A
I_S = --0.9 A, V_GS = 0 V
--0.45
--10
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = --10 V, V_GS = --4.5 V, I_D = --2.7 A
V_DD = --10 V, R_L = 10 Ω
I_D ≅ --1 A, V_GEN = --4.5 V, R_G = 6 Ω
I_F = --0.9 A, di/dt = 100 A/ms
Typ
0.095
0.137
0.205
7
--0.8
4.4
1.4
0.65
16
30
30
27
20
Max Unit
V
100
nA
--1
--5
mA
A
0.110
0.160
Ω
0.240
S
--1.2
V
6.5
nC
25
45
45
ns
40
40
SCHOTTKY SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
V_F
Maximum Reverse Leakage Current
I_rm
Junction Capacitance
C_T
I_F = 0.5 A
I_F = 0.5 A, T_J = 125_C
V_r = 20 V
V_r = 20 V, T_J = 85_C
V_r = 20 V, T_J = 125_C
V_r = 10 V
Typ
0.42
0.33
0.002
0.10
1.5
31
Max
0.48
0.4
0.100
1
10
Unit
V
mA
pF
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2-2
Document Number: 71239
S-21251—Rev. B, 05-Aug-02