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SI4974DY Datasheet, PDF (6/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET
Si4974DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
VGS = 10 thru 6 V
35
5V
30
25
20
15
4V
10
5
0
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
40
35
30
25
20
15
TC = 125 °C
10
5
25 °C
- 55 °C
0
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.10
0.08
0.06
0.04
VGS = 4.5 V
VGS = 10 V
0.02
0.00
0
5 10 15 20 25 30 35 40
ID - Drain Current (A)
On-Resistance vs. Drain Current
6
VDS = 15 V
5
ID = 6 A
550
500
450
400
350
300
250
200
150
100
50
Crss
0
0
5
Ciss
Coss
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 10 V
ID = 6 A
1.4
4
1.2
3
1.0
2
0.8
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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6
Document Number: 73052
S09-0228-Rev. D, 09-Feb-09