SI4974DY Datasheet, PDF (1/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET
Si4974DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Channel-1
30
Channel-2
0.019 at V_GS = 10 V
0.026 at V_GS = 4.5 V
0.035 at V_GS = 10 V
0.048 at V_GS = 4.5 V
I_D (A)
8.0
6.9
6.0
5.0
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4974DY-T1-E3 (Lead (Pb)-free)
Si4974DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFETs
• 100 % R_g Tested
APPLICATIONS
• Logic DC/DC
- Notebook PC
D₁
D₂
G₁
S₁
N-Channel 1
MOSFET
G₂
S₂
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Channel-1
Parameter
Symbol
10 s Steady State
Channel-2
Unit
10 s Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
8.0
6.5
6.0
4.7
6.0
4.8
4.4
3.5
Pulsed Drain Current
I_DM
40
30
A
Continuous Source Current (Diode Conduction)^a
I_S
1.8
1.0
1.8
1.0
Single Pulse Avalanche Current
L = 0.1 mH
I_AS
15
Avalanche Energy
E_AS
11
7
2.45
mJ
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
2
1.3
1.1
0.7
2
1.3
1.1
0.7
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Channel-1
Typ.
Max.
50
62.5
90
110
30
40
Document Number: 73052
S09-0228-Rev. D, 09-Feb-09
Channel-2
Typ.
Max.
52
62.5
91
110
32
40
Unit
°C/W
www.vishay.com
1