SI4974DY Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si4974DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
V_GS = 10 V thru 5 V
35
30
25
20
4V
15
10
5
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
40
35
30
25
20
15
T_C = 125 °C
10
5
25 °C
- 55 °C
0
0
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.05
1200
0.04
0.03
0.02
V_GS = 4.5 V
V_GS = 10 V
0.01
0.00
0
5 10 15 20 25 30 35 40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
6
V_DS = 15 V
5
I_D = 8 A
4
3
2
1
1000
800
600
400
C_oss
C_iss
200
0 ^Crss
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V
I_D = 8 A
1.4
1.2
1.0
0.8
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73052
S09-0228-Rev. D, 09-Feb-09
www.vishay.com
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