SI4974DY Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si4974DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.10
T_J = 150 °C
10
T_J = 25 °C
0.08
0.06
0.04
I_D = 8 A
0.02
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
0.0
I_D = 250 µA
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
10^-3
10^-2
10^-1
1
10
Time (s)
Single Pulse Power
100 600
100
Limited by R_DS(on)*
10
1 ms
1
10 ms
0.1
T_C = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
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4
Document Number: 73052
S09-0228-Rev. D, 09-Feb-09