SI4926DY Datasheet, PDF (6/7 Pages) Vishay Siliconix – Asymmetrical Dual N-Channel 30-V (D-S) MOSFET

Si4926DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL 2
Gate Charge
10
On-Resistance vs. Junction Temperature
1.8
V_DS = 15 V
8
I_D = 10.5 A
1.6
V_GS = 10 V
I_D = 10.5 A
1.4
6
1.2
4
1.0
2
0.8
0
0
6
12
18
24
30
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
40
T_J = 150_C
10
T_J = 25_C
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
0.04
0.03
0.02
I_D = 10.5 A
0.01
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.2
I_D = 250 mA
–0.0
–0.2
–0.4
–0.6
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
100
80
60
40
20
–0.8
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
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2-6
Document Number: 71143
S-00238—Rev. A, 21-Feb-00