SI4926DY Datasheet, PDF (2/7 Pages) Vishay Siliconix – Asymmetrical Dual N-Channel 30-V (D-S) MOSFET

Si4926DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = 20 V
V_DS = 24 V, V_GS = 0 V
V_DS = 24 V, V_GS = 0 V, T_J = 85_C
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 6.3 A
V_GS = 10 V, I_D = 10.5 A
V_GS = 4.5 V, I_D = 5.4 A
V_GS = 4.5 V, I_D = 9.0 A
V_DS = 15 V, I_D = 6.3 A
V_DS = 15 V, I_D = 10.5 A
I_S = 1.3 A, V_GS = 0 V
I_S = 2.2 A, V_GS = 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Channel-1
V_DS = 15 V, V_GS = 5 V, I_D = 6.3 A
Channel-2
V_DS = 15 V, V_GS = 5 V, I_D = –10.5 A
Channel-1
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
Channel-2
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 1.3 A, di/dt = 100 A/ms
I_F = 2.2 A, di/dt = 100 mA/ms
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min
0.8
0.8
20
30
Typ Max Unit
V
100
nA
100
1
1
mA
15
15
A
0.018 0.022
0.0105 0.0125
W
0.024 0.030
0.0135 0.017
17
S
28
0.7
1.1
V
0.72
1.1
8.0
12
18
25
1.75
nC
3.6
3.2
7.8
10
20
13
30
5
10
10
20
26
50
ns
37
80
8
16
27
50
30
60
35
70
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2-2
Document Number: 71143
S-00238—Rev. A, 21-Feb-00