SI4926DY Datasheet, PDF (1/7 Pages) Vishay Siliconix – Asymmetrical Dual N-Channel 30-V (D-S) MOSFET

New Product
Si4926DY
Vishay Siliconix
Asymmetrical Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
Channel-1
Channel-2
V_DS (V)
30
r_DS(on) (W)
0.022 @ V_GS = 10 V
0.030 @ V_GS = 4.5 V
0.0125 @ V_GS = 10 V
0.017 @ V_GS = 4.5 V
I_D (A)
6.3
5.4
10.5
9.0
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D2
6 ^D2
5 ^D2
D₁
D₂ D₂ D₂
G₁
G₂
S₁
N-Channel 1
MOSFET
S₂
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Channel 1
Channel 2
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
T_A = 25_C
T_A = 70_C
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
20
6.3
5.3
10.5
7.5
5.4
4.2
8.5
6.0
30
40
1.3
0.9
2.2
1.15
1.4
1.0
2.4
1.25
0.9
0.64
1.5
0.80
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
t v 10 sec
Steady-State
R_thJA
Maximum Junction-to-Foot (Drain)
Steady-State
R_thJC
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71143
S-00238—Rev. A, 21-Feb-00
Channel 1
Typ
Max
72
90
100
125
51
63
Channel 2
Typ
Max
43
53
82
100
25
30
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1