SI4926DY Datasheet, PDF (5/7 Pages) Vishay Siliconix – Asymmetrical Dual N-Channel 30-V (D-S) MOSFET

New Product
Si4926DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
CHANNEL 1
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^–4
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
40
V_GS = 10 thru 4 V
32
32
3V
24
24
1
10
CHANNEL 2
Transfer Characteristics
16
8
0
0
0.030
1, 2 V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
16
T_C = 125_C
8
0
0
2000
25_C
–55_C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS – Gate-to-Source Voltage (V)
Capacitance
0.024
0.018
0.012
V_GS = 4.5 V
V_GS = 10 V
0.006
0
0
8
16
24
32
40
I_D – Drain Current (A)
Document Number: 71143
S-00238—Rev. A, 21-Feb-00
1600
C_iss
1200
800
C_oss
400
C_rss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
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