SI4724 Datasheet, PDF (6/11 Pages) Vishay Siliconix – N-Channel Synchronous MOSFETs With Break-Before-Make

Si4724
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
80
60
I_D = 5 A
40
20
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage (Q₁)
1.6
I_D = 5 A
1.4 V_GS = 4.5 V
1.2
1.0
0.8
0.6
0.4
- 50 - 25 0
25 50 75 100 125 150
T_A - Ambient Temperature (°C)
On-Resistance vs. Ambient Temperature
350
300
I_DDQ at IN = H
250
200
I_DDQ at IN = L
150
100
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
Input Current vs. Junction Temperature
800
700
600
500
400
300
200
100
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Output Capacitance vs. Drain Voltage (Q₁ and Q₂)
16
14
V_IN = 12 V
V_DD = 5 V
DC = 25 %
12
BOOT = 0.1 µF
I_LOAD = 1 A
10
8
6
4
2
0
0
200
400
600
800
Frequency (kHz)
I_CC vs. Frequency
1000
10
T_J = 150 °C
T_J = 25 °C
1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
www.vishay.com
Document Number: 71863
6
S11-1185-Rev. F, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000