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SI4724 Datasheet, PDF (3/11 Pages) Vishay Siliconix – N-Channel Synchronous MOSFETs With Break-Before-Make
Si4724
Vishay Siliconix
SPECIFICATIONS
Parameter
Power Supplies
Logic Voltage
Logic Current
Logic Input
Logic Input Voltage (VIN)
Protection
Symbol
VDD
IDD(EN)
IDD(DIS)
High
VIH
Low
VIL
Test Conditions Unless Specified
TA = 25 °C
4.5 V < VDD < 5.5 V, 4.5 V < VD1 < 30 V
VDD = 4.5 V, VIN = 4.5 V
VDD = 4.5 V, VIN = 0 V
VDD = 4.5
- 40 °C TA  85 °C
Min.
4.5
3.15
- 0.3
Break-Before-Make Reference
Undervoltage Lockout
Undervoltage Lockout Hysteresis
MOSFET Drivers
Driver Impedance
MOSFETs
VBBM
VUVLO
VH
RDR1
RDR2
VDD = 5.5
SYNC = 4.5
3.75
VDD = 4.5 V
Driver 1
Driver 2
Drain-Source Voltage
VDS
ID = 250 µA
30
Drain Source On State Resistancea
RDS(on)1
RDS(on)2
VDD = 4.5 V, ID = 5 A
TA = 25 °C
Q1
Q2
Diode Forward Voltagea
VSD1
VSD2
IS = 2 A, VGS = 0
Q1
Q2
Dynamicb (Unless Specified-Fs = 250 kHz, VIN = 12 V. VDD = 5 V, I = 5 A, Refer to Switching Test Setup)
Turn Off Delay
t
td(off)1
td(off)2
t1-2
t2-1
See Timing Diagram
VIN to G1
VIN to G2
G1 to G2
G2 to G1
Source-Drain Reverse Recovery
Time-Q2
tfrr
IF 2.7 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Limits
Typ.
280
220
2.3
2.25
2.4
4
0.4
3
2
30
24
0.7
0.7
28
17
16
38
50
Max.
5.5
500
500
0.8
4.25
37.5
29
1.1
1.1
56
40
32
80
80
Unit
V
µA
V
V
V
V
m
V
ns
SCHOTTKY SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Forward Voltage Drop
VF
IF = 1 A
IF = 1 A, TJ = 125 °C
Vr = 30 V
Maximum Reverse Leakage Current
Irm
Vr = 30 V, TJ = 100 °C
Vr = - 30 V, TJ = 125 °C
Junction Capacitance
CT
Vr = 10 V
Min
Typ
Max Unit
0.47
0.50
V
0.36
0.42
0.004 0.100
0.7
10
mA
3
20
50
pF
Document Number: 71863
www.vishay.com
S11-1185-Rev. F, 13-Jun-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000