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SI4532DY Datasheet, PDF (6/7 Pages) Fairchild Semiconductor – Dual N- and P-Channel Enhancement Mode Field Effect Transistor | |||
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Si4532DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SourceÄDrain Diode Forward Voltage
20
PÄCHANNEL
OnÄResistance vs. GateÄtoÄSource Voltage
0.5
0.4
10
0.3
0.2
TJ = 150_C
TJ = 25_C
0.1
ID = 2.5 A
1
0
0.8
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD â Source-to-Drain Voltage (V)
Threshold Voltage
0
0
2
4
6
8
10
VGS â Gate-to-Source Voltage (V)
Single Pulse Power
30
0.6
25
0.4
20
ID = 250 mA
0.2
15
0.0
10
â0.2
5
â0.4
â50 â25
0 25 50 75 100 125 150
TJ â Temperature (_C)
0
0.01
0.1
1
Time (sec)
Normalized Thermal Transient Impedance, JunctionÄtoÄAmbient
2
1 Duty Cycle = 0.5
10 30
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10â4
10â3
10â2
10â1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
1
10
30
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com
S-56944âRev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
3-6
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