SI4532DY Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – Dual N- and P-Channel Enhancement Mode Field Effect Transistor

Si4532DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V_GS = 10 thru 6 V
5V
16
12
NĆCHANNEL
Transfer Characteristics
20
T_C = –55_C
25_C
16
125_C
12
8
4V
4
3V
0
0
2
4
6
8
V_DS – Drain-to-Source Voltage (V)
OnĆResistance vs. Drain Current
0.20
0.16
V_GS = 4.5 V
0.12
0.08
0.04
V_GS = 10 V
0
0
4
8
12
16
20
I_D – Drain Current (A)
Gate Charge
10
V_DS = 10 V
8
I_D = 3.9 A
6
4
2
8
4
0
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
Capacitance
750
600
C_iss
450
300
C_oss
150
C_rss
0
0
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
OnĆResistance vs. Junction Temperature
2.0
V_GS = 10 V
I_D = 3.9 A
1.6
1.2
0.8
0
0
2
4
6
8
10
Q_g – Total Gate Charge (nC)
0.4
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone [phone] S FaxBack [phone] S www.siliconix.com
S-56944—Rev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
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