SI4532DY Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – Dual N- and P-Channel Enhancement Mode Field Effect Transistor

Si4532DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
PĆCHANNEL
Output Characteristics
20
V_GS = 10, 9, 8, 7, 6 V
16
5V
12
Transfer Characteristics
20
T_C = –55_C
16
25_C
12
125_C
8
4V
4
3V
0
0
2
4
6
8
V_DS – Drain-to-Source Voltage (V)
OnĆResistance vs. Drain Current
0.40
8
4
0
0
1
2
3
4
5
6
7
V_GS – Gate-to-Source Voltage (V)
Capacitance
700
0.32
0.24
0.16
0.08
V_GS = 4.5 V
V_GS = 10 V
600
C_iss
500
400
300
C_oss
200
100
C_rss
0
0
3
6
9
12
15
I_D – Drain Current (A)
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
Gate Charge
10
V_DS = 10 V
I_D = 2.5 A
8
6
4
2
0
0
2
4
6
8
10
Q_g – Total Gate Charge (nC)
OnĆResistance vs. Junction Temperature
2.0
V_GS = 10 V
1.8
I_D = 2.5 A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
–50 –25
0 25 50 75 100 125 150
T_J – Junction Temperature (_C)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone [phone] S FaxBack [phone] S www.siliconix.com
S-56944—Rev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
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