SI4532DY Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – Dual N- and P-Channel Enhancement Mode Field Effect Transistor

Si4532DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SourceĆDrain Diode Forward Voltage
20
T_J = 150_C
10
T_J = 25_C
NĆCHANNEL
OnĆResistance vs. GateĆtoĆSource Voltage
0.20
0.16
0.12
0.08
I_D = 3.9 A
0.04
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD – Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.2
I_D = 250 mA
–0.0
–0.2
–0.4
–0.6
–0.8
Single Pulse Power
30
25
20
15
10
5
–1.0
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.01
0.1
1
Time (sec)
Normalized Thermal Transient Impedance, JunctionĆtoĆAmbient
2
1
Duty Cycle = 0.5
10 30
0.2
0.1
0.1
0.05
0.02
Single Pulse
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
0.01
10^–4
10^–3
10^–2
10^–1
1
10
30
Square Wave Pulse Duration (sec)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone [phone] S FaxBack [phone] S www.siliconix.com
S-56944—Rev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
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