IRFPS40N50L Datasheet, PDF (6/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.087ohm, Id=46A)

IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
1
10
100
10ms
100
V_DS , Drain-to-Source Voltage (V)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
2000
1500
ID
TOP
21A
30A
BOTTOM 46A
1000
500
0
25
50
75
100
125
150
Starting T_J , Junction Temperature( ^°C)
Fig. 12d - Maximum Safe Operating Area
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13a - Gate Charge Test Circuit
V_GS
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13b - Basic Gate Charge Waveform
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Document Number: 91260
S-81367-Rev. B, 21-Jul-08