IRFPS40N50L Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.087ohm, Id=46A)

IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
1000000
100000
10000
V_GS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
100
Coss
Crss
10
1
10
100
1000
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20 _{ID = 47A}
15
V_DS= 400V
V_DS= 250V
V_DS= 100V
10
5
0
0
100
200
300
400
Q_G , Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
40
35
30
25
20
15
10
5
0
0 100 200 300 400 500 600
V_DS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Output Capacitance Stored Energy vs. V_DS
1000
100
T_J = 150° C
10
T_J = 25°C
1
V _GS = 0 V
0.1
0.2
0.7
1.2
1.7
2.2
V_SD ,Source-to-Drain Voltage (V)
Fig. 8 - Typical Source Drain Diode Forward Voltage
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4
Document Number: 91260
S-81367-Rev. B, 21-Jul-08