IRFPS40N50L Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.087ohm, Id=46A)

IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
1000
100
T_J = 150° C
10
1
4.5V
0.1
10
T_J = 25^°C
1
0.01
0.1
20μs PULSE WIDTH
TJ = 25 ^°C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
0.1
4
V _DS= 50V
20µs PULSE WIDTH
5
6
7
8
9 10 11
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
10
4.5V
1
0.1
0.1
20µs PULSE WIDTH
TJ = 150°C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0 _{ID = 47A}
2.5
2.0
1.5
1.0
0.5
V_GS= 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (^° C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91260
S-81367-Rev. B, 21-Jul-08
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