IRFPS40N50L Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.087ohm, Id=46A)

IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient^a
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)^a
Note
a. R_th is measured at T_J approximately 90 °C.
SYMBOL
R_thJA
R_thCS
R_thJC
TYP.
-
0.24
-
MAX.
40
-
0.23
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V_DS
ΔV_DS/T_J
V_GS(th)
I_GSS
Zero Gate Voltage Drain Current
I_DSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R_DS(on)
g_fs
C_iss
C_oss
C_rss
Output Capacitance
C_oss
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
C_oss eff.
C_{oss eff.} (ER)
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Internal Gate Resistance
R_G
Turn-On Delay Time
Rise Time
t_d(on)
t_r
Turn-Off Delay Time
Fall Time
t_d(off)
t_f
Drain-Source Body Diode Characteristics
V_GS = 0 V, I_D = 250 µA
Reference to 25 °C, I_D = 1 mA
V_DS = V_GS, I_D = 250 µA
V_GS = ± 30 V
V_DS = 500 V, V_GS = 0 V
V_DS = 400 V, V_GS = 0 V, T_J = 125 °C
V_GS = 10 V
I_D = 28 A^b
V_DS = 50 V, I_D = 46 A
V_GS = 0 V,
V_DS = 25 V,
f = 1.0 MHz, see fig. 5
V_GS = 0 V
V_DS = 1.0 V , f = 1.0 MHz
V_DS = 400 V , f = 1.0 MHz
V_DS = 0 V to 400 V^c
V_GS = 10 V
I_D = 46 A, V_DS = 400 V,
see fig. 7 and 15^b
f = 1 MHz, open drain
V_DD = 250 V, I_D = 46 A,
R_G = 0.85 Ω, V_GS = 10 V,
see fig. 14a and 14b^b
MIN.
500
-
3.0
-
-
-
-
21
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
TYP. MAX. UNIT
-
0.60
-
-
-
-
0.087
-
-
-
5.0
± 100
50
2.0
0.100
-
V
V/°C
V
nA
µA
mA
Ω
S
8110
-
960
-
130
-
11200
-
pF
240
-
440
-
310
-
-
380
-
80
nC
-
190
0.90
-
Ω
27
-
170
-
ns
50
-
69
-
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current^a
I_S
MOSFET symbol
showing the
integral reverse
I_SM
p - n junction diode
D
G
S
-
-
46
A
-
-
180
Body Diode Voltage
V_SD
T_J = 25 °C, I_S = 46 A, V_GS = 0 V^b
-
-
1.5
V
Body Diode Reverse Recovery Time
t_rr
T_J = 25 °C, I_F = 46 A
T_J = 125 °C, dI/dt = 100 A/µs^b
-
170 250
ns
-
220 330
Body Diode Reverse Recovery Charge
Q_rr
T_J = 25 °C, I_S = 46 A, V_GS = 0 V^b
T_J = 125 °C, dI/dt = 100 A/µs^b
-
705 1060
nC
-
1.3
2.0
Reverse Recovery Current
I_RRM
T_J = 25 °C
-
9.0
-
A
Forward Turn-On Time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S and L_D)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 400 µs; duty cycle ≤ 2 %.
c. C_oss eff. is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 to 80 % V_DS.
C_oss eff. (ER) is a fixed capacitance that stores the same energy as C_oss while V_DS is rising from 0 to 80 % V_DS.
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Document Number: 91260
S-81367-Rev. B, 21-Jul-08