IRFB9N60A Datasheet, PDF (6/9 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

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IRFB9N60A, SiHFB9N60A
Vishay Siliconix
15 V
V _DS
t_p
V_DS
L
Driver
R_G
20 V
t_p
D.U.T.
I_AS
0.01 W
+
- ^VDD
A
Fig. 12a - Unclamped Inductive Test Circuit
600
500
400
I_AS
Fig. 12b - Unclamped Inductive Waveforms
TOP
BOTTOM
ID
4.1A
5.8A
9.2A
300
200
100
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
S16-0763-Rev. D, 02-May-16
6
Document Number: 91103
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