IRFB9N60A Datasheet, PDF (4/9 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

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100000
10000
1000
100
V_GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
Ciss
Coss
10
Crss
1
A
1
10
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
IRFB9N60A, SiHFB9N60A
Vishay Siliconix
100
10
T_J = 150° C
1
T_J = 25° C
0.1
0.2
V_GS = 0 V
0.5
0.7
1.0
1.2
V_SD ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = 9.2A
16
12
V_DS = 48000VV
V_DS = 300V
V_DS = 120V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
10
100us
1ms
1
10ms
T_C = 25°C
T_J = 150°C
Single Pulse
0.1
10
100
1000
V_DS , Drain-to-Source Voltage (V)
10000
Fig. 8 - Maximum Safe Operating Area
S16-0763-Rev. D, 02-May-16
4
Document Number: 91103
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