IRFB9N60A Datasheet, PDF (5/9 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

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10.0
8.0
6.0
4.0
2.0
0.0
25
50
75
100
125
150
T_C , Case Temperature ( ^°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFB9N60A, SiHFB9N60A
Vishay Siliconix
V_DS
V_GS
R_G
R_D
D.U.T.
10V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+
- ^VDD
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.00001
P_DM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t₂
Notes:
1. Duty factor D = t1 / t 2
2. Peak T _J = P _DM x Z _thJC + T_C
0.0001
0.001
0.01
0.1
1
t₁ , Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S16-0763-Rev. D, 02-May-16
5
Document Number: 91103
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